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| PD -94273A IRG4MC50U INSULATED GATE BIPOLAR TRANSISTOR Features * * * * * * * Electrically Isolated and Hermetically Sealed Simple Drive Requirements Latch-proof Fast Speed operation 3 kHz - 8 kHz High operating frequency Switching-loss rating includes all "tail" losses Ceramic eyelets C UltraFast Speed IGBT VCES = 600V G E VCE(on) max = 2.25V @VGE = 15V, IC = 27A n-channel Benefits * Generation 4 IGBT's offer highest efficiency available * IGBT's optimized for specified application conditions * Designed to be a "drop-in" replacement for equivalent IR Hi-Rel Generation 3 IGBT's Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, highcurrent applications. TO-254AA Absolute Maximum Ratings Parameter VCES IC @ TC = 25C IC @ TC = 100C ICM ILM VGE PD @ TC = 25C PD @ T C = 100C TJ TSTG Collector-to-Emitter Breakdown Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Lead Temperature Weight Max. 600 35* 27 140 140 20 150 60 -55 to + 150 300 (0.063in./1.6mm from case for 10s) 9.3 (typical) Units V A V W C g Thermal Resistance Parameter R thJC Junction-to-Case Min Typ Max Units -- -- 0.83 C/W Test Conditions www.irf.com 1 02/08/02 IRG4MC50U Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)CES V(BR)ECS Parameter Min. Typ. Collector-to-Emitter Breakdown Voltage 600 --- Emitter-to-Collector Breakdown Voltage S 17 --- V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage --- 0.56 --- --- VCE(ON) Collector-to-Emitter Saturation Voltage --- --- --- --- VGE(th) Gate Threshold Voltage 3.0 --- VGE(th)/TJ Temperature Coeff. of Threshold Voltage --- -14 gfe Forward Transconductance T 16 --- --- --- ICES Zero Gate Voltage Collector Current --- --- IGES Gate-to-Emitter Leakage Current --- --- Max. Units Conditions --- V VGE = 0V, IC = 1.0 mA --- V VGE = 0V, IC = 1.0 A --- V/C VGE = 0V, IC = 1.0 mA VGE = 15V 2.25 IC = 27A 2.75 V IC = 35A See Fig.2, 5 2.0 IC = 27A , TJ = 125C 6.0 VCE = VGE, IC = 1.0 mA --- mV/C VCE = VGE, IC = 250 A --- S VCE 15V, IC = 27A 50 VGE = 0V, VCE = 480V A 2000 VGE = 0V, VCE = 480V, TJ = 125C 100 nA VGE = 20V Switching Characteristics @ TJ = 25C (unless otherwise specified) Qg Qge Qgc td(on) tr td(off) tf Ets td(on) tr td(off) tr Ets LC+LE Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Rise Time Total Switching Loss Total Inductance Min. --- --- --- --- --- --- --- --- --- --- --- --- --- --- Max. Units Conditions 270 IC = 27A 38 nC VCC = 480V See Fig. 8 90 VGE = 15V 75 TJ = 25C 75 IC = 27A, VCC = 480V ns 150 VGE = 15V, RG = 2.35 100 Energy losses include "tail" 0.9 mJ See Fig. 10, 11, 13, 14 75 TJ = 125C, 75 ns IC = 27A, VCC = 480V 200 VGE = 15V, RG = 2.35 150 Energy losses include "tail" 2.0 mJ See Fig. 13, 14 --- nH Measured from Collector lead (6mm/ 0.25in. from package) to Emitter lead (6mm / 0.25in. from package) --- 4150 --- VGE = 0V --- 250 --- pF VCC = 30V See Fig. 7 --- 45 --- = 1.0MHz Typ. --- --- --- --- --- --- --- --- --- --- --- --- --- 6.8 Cies Coes Cres Notes: Input Capacitance Output Capacitance Reverse Transfer Capacitance Q Repetitive rating; VGE = 20V, pulse width limited by max. junction temperature. ( See fig. 13b ) S Pulse width 80s; duty factor 0.1%. T Pulse width 5.0s, single shot. R VCC = 80%(VCES), VGE = 20V, L = 100H, RG = 2.35, (See fig. 13a) 2 www.irf.com IRG4MC50U 80 Square wave: 60% of rated voltage Triangular wave: 60 Load Current ( A ) Ideal diodes Clamp voltage: 80% of rated 40 20 For both: Duty cycle : 50% Tj = 125C Tsink = 90C Gate drive as specified Power Dissipation = 37W 0.1 1 10 100 0 f , Frequency ( kHz ) Fig. 1 - Typical Load Current vs. Frequency (For square wave, I=IRMS of fundamental; for triangular wave, I=IPK) 1000 1000 100 I C , Collector-to-Emitter Current (A) I C , Collector-to-Emitter Current (A) 100 TJ = 150 C TJ = 25 C 10 10 T = 150 C J TJ = 25 C V = 15V 20s PULSE WIDTH GE 1 0.1 1 10 1 4 6 8 V = 50V 5s PULSE WIDTH CC 10 12 VCE , Collector-to-Emitter Voltage (V) VGE , Gate-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics www.irf.com 3 IRG4MC50U 60 3.0 V GE = 15V VGE = 15V 80s PULSE WIDTH VCE , Collector-to Emitter Voltage (V) Maximum DC Collector Current (A) 50 LIMITED BY PACKAGE IC = 54A 40 30 2.0 IC = 27A IC = 14A 20 10 0 25 50 75 100 125 150 1.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 T J , Junction Temperature (C) T J , Junction Temperature (C) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Collector-to-Emitter Voltage vs. Junction Temperature 1 Thermal Response (Z thJC) D = 0.50 0.20 0.1 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) 0.01 0.00001 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJC + TC 0.1 0.001 0.01 1 PDM t1 t2 0.0001 t1 , Rectangular Pulse Duration (sec) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com IRG4MC50U 8000 VGE , Gate-to-Emitter Voltage (V) C, Capacitance (pF) 6000 VGE = 0V, f = 1MHz Cies = Cge + Cgc , Cce SHORTED Cres = Cgc Coes = Cce + Cgc 20 VCC = 400V 480V I C = 27A 16 Cies 4000 12 8 2000 C oes C res 4 0 1 10 100 0 0 20 40 60 80 100 120 VCE , Collector-to-Emitter Voltage (V) QG , Total Gate Charge (nC) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage 1.60 VCC= 480V VGE = 15V TJ = 25C I C = 27A 1.20 10 RG = 2.35 VGE = 15V VCC = 480V IC = 54A Total Switching Losses (mJ) Total Switching Losses (mJ) IC = 27A 1 0.80 IC = 14A 0.40 0 10 20 30 40 50 0.1 -60 -40 -20 0 20 40 60 80 100 120 140 160 RG, Gate Resistance ( ) T J, Junction Temperature (C) Fig. 9 - Typical Switching Losses vs. Gate Resistance Fig. 10 - Typical Switching Losses vs. Junction Temperature www.irf.com 5 IRG4MC50U 5.0 RG = 2.35 TJ = 125C 150C VGE = 15V VCC = 480V 1000 Total Switching Losses (mJ) 4.0 IC , Collector-to-Emitter Current (A) VGE = 20V TJ = 125 100 3.0 SAFE OPERATING AREA 2.0 10 1.0 0.0 10 20 30 40 50 60 1 0.1 1 10 100 1000 IC, Collector Current (A) VDS , Drain-to-Source Voltage (V) Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current Fig. 12 - Turn-Off SOA 6 www.irf.com IRG4MC50U L 50V 1 00 0V VC * D .U .T. RL = 0 - 720V 720V 4 X IC@25C 480F 960V R Q * Driver s am e ty pe as D .U .T.; Vc = 80% of V ce (m ax ) * Note: D ue to the 50V pow er s upply, pulse w idth a nd inductor w ill inc rea se to obta in ra ted Id. Fig. 13a - Clamped Inductive Load Test Circuit Fig. 13b - Pulsed Collector Current Test Circuit IC L D river* 50V 1000V Q R S * Driver same type as D.U.T., VC = 720V D .U .T. VC Fig. 14a - Switching Loss Test Circuit Q R 9 0% S 1 0% 90 % VC t d (o ff) Fig. 14b - Switching Loss Waveforms 10 % IC 5% t d (o n ) tr E on E ts = ( Eo n +E o ff ) tf t=5 s E o ff www.irf.com 7 IRG4MC50U Case Outline and Dimensions -- TO-254AA 0.12 [.005] 3.78 [.149] 3.53 [.139] A 13.84 [.545] 13.59 [.535] 6.60 [.260] 6.32 [.249] 1.27 [.050] 1.02 [.040] 3.78 [.149] 3.53 [.139] A 13.84 [.545] 13.59 [.535] 6.60 [.260] 6.32 [.249] 1.27 [.050] 1.02 [.040] 0.12 [.005] 17.40 [.685] 16.89 [.665] 1 2 3 20.32 [.800] 20.07 [.790] 13.84 [.545] 13.59 [.535] B 22.73 [.895] 21.21 [.835] 17.40 [.685] 16.89 [.665] 1 2 3 20.32 [.800] 20.07 [.790] 13.84 [.545] 13.59 [.535] B R 1.52 [.060] C 17.40 [.685] 16.89 [.665] 0.84 [.033] MAX. 4.82 [.190] 3.81 [.150] 3.81 [.150] 4.06 [.160] 3.56 [.140] 3X 1.14 [.045] 0.89 [.035] 0.36 [.014] B A 3X 3.81 [.150] 2X 1.14 [.045] 0.89 [.035] 0.36 [.014] BA 3.81 [.150] 2X NOTES : 1. 2. 3. 4. DIMENS IONING & T OLERANCING PER ASME Y14.5M-1994. ALL DIMENS IONS ARE S HOWN IN MILLIMETERS [INCHES ]. CONTROLLING DIMENS ION: INCH. CONFORMS TO JEDEC OUTLINE TO-254AA. PIN ASSIGNMENTS 1 = COLLECTOR 2 = EMITTER 3 = GATE CAUTION BERYLLIA WARNING PER MIL-PRF-19500 Packages containing beryllia shall not be ground, sandblasted, machined, or have other operations performed on them which will will produce beryllia or beryllium dust. Furthermore, beryllium oxide packages shall not be placed in acids that will produce fumes containing beryllium. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 02/02 8 www.irf.com |
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